| PART |
Description |
Maker |
| 2SD2161 2SD2161L |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC Corp.
NEC[NEC]
|
| NTE458 |
From old datasheet system
N-Channel Silicon JFET General Purpose, Low Noise, Audio Frequency Amplifier
N-Channel Silicon JFET General Purpose Low Noise Audio Frequency Amplifier
|
NTE[NTE Electronics]
|
| AS3930-BTST AS3930-BQFT |
Single Channel Low Frequency Wakeup Receiver
|
austriamicrosystems AG
|
| 15C01M12 EN7505A EN7505 |
Bipolar Transistor, 15V, 0.7A, Low VCE(sat) NPN Single MCP
Low-Frequency General-Purpose Amplifier Applications
Low-Frequency General-Purpose Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| SA8027W SA8027DH SA8027DH512 |
2.5 GHz low voltage / low power RF fractional-N/IF integer frequency synthesizer
2.5 GHz low voltage, low power RF fractional-N/IF integer frequency synthesizer 2.5 GHz的低电压，射频fractional-N/IF整数频率合成器的低功
|
Philips
NXP Semiconductors N.V.
|
| 2SJ14510 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE
|
Isahaya Electronics Corporation
|
| KSD560 |
NPN (LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE)
|
Samsung semiconductor
|
| 2SC4853A |
Low-Voltage, Low-Current High-Frequency Amplifier Applications
|
Sanyo Semicon Device
|
| ENA1076A 2SC4853A12 |
Low-Voltage, Low-Current High-Frequency Amplifi er Applications
|
Sanyo Semicon Device
|
| 2SK2802 |
Silicon N Channel MOS FET Low Frequency Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SD1993 |
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
|
PANASONIC CORP
Panasonic Semiconductor
|
